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Kvantovaya Elektronika, 1981, Volume 8, Number 9, Pages 2021–2024 (Mi qe8364)  

Brief Communications

Influence of structure defects on the damage threshold of ZnSe crystals

Yu. V. Kompaniets, B. V. Mel'nikov, A. V. Shatilov
Abstract: Optical breakdown in the bulk of ZnSe subjected to τ ~100 nsec pulses of λ = 10.6 μ laser radiation resulted from thermoelastic damage of submicron gas–selenium particles containing radiation-absorbing associates of carbon with oxygen and hydrogen. The breakdown power density was governed not so much by the density of the particles as the nature of defects which they decorated. The proposed grading of the defect content of crystals should make it possible to estimate the bulk optical strength of zinc selenide without destructive testing.
Received: 09.02.1981
English version:
Soviet Journal of Quantum Electronics, 1981, Volume 11, Issue 9, Pages 1228–1230
DOI: https://doi.org/10.1070/QE1981v011n09ABEH008364
Bibliographic databases:
Document Type: Article
UDC: 621.373.826:548.5
PACS: 61.80.-x, 42.60.He
Language: Russian


Citation: Yu. V. Kompaniets, B. V. Mel'nikov, A. V. Shatilov, “Influence of structure defects on the damage threshold of ZnSe crystals”, Kvantovaya Elektronika, 8:9 (1981), 2021–2024 [Sov J Quantum Electron, 11:9 (1981), 1228–1230]
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