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Lasers
Coupling of radiation out of a single-frequency GaAlAs/GaAs laser with an external dispersive resonator
Yu. A. Bykovskiĭ, I. G. Goncharov, A. P. Grachev, G. T. Pak
Abstract:
A study was made of the operation of a semiconductor laser with an external dispersive resonator 15 mm long. An output power of 40.5 mW was reached for single-frequency emission from a semitransparent mirror placed inside the resonator. Single-frequency emission was retained throughout the investigated range of powers from the threshold value to the maximum.
Received: 13.07.1988
Citation:
Yu. A. Bykovskiĭ, I. G. Goncharov, A. P. Grachev, G. T. Pak, “Coupling of radiation out of a single-frequency GaAlAs/GaAs laser with an external dispersive resonator”, Kvantovaya Elektronika, 16:5 (1989), 957–960 [Sov J Quantum Electron, 19:5 (1989), 622–624]
Linking options:
https://www.mathnet.ru/eng/qe8006 https://www.mathnet.ru/eng/qe/v16/i5/p957
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Statistics & downloads: |
Abstract page: | 114 | Full-text PDF : | 60 | First page: | 1 |
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