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Kvantovaya Elektronika, 1989, Volume 16, Number 5, Pages 957–960 (Mi qe8006)  

Lasers

Coupling of radiation out of a single-frequency GaAlAs/GaAs laser with an external dispersive resonator

Yu. A. Bykovskiĭ, I. G. Goncharov, A. P. Grachev, G. T. Pak
Abstract: A study was made of the operation of a semiconductor laser with an external dispersive resonator 15 mm long. An output power of 40.5 mW was reached for single-frequency emission from a semitransparent mirror placed inside the resonator. Single-frequency emission was retained throughout the investigated range of powers from the threshold value to the maximum.
Received: 13.07.1988
English version:
Soviet Journal of Quantum Electronics, 1989, Volume 19, Issue 5, Pages 622–624
DOI: https://doi.org/10.1070/QE1989v019n05ABEH008006
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.Da, 42.60.Jf, 42.79.Bh, 42.79.Dj
Language: Russian


Citation: Yu. A. Bykovskiĭ, I. G. Goncharov, A. P. Grachev, G. T. Pak, “Coupling of radiation out of a single-frequency GaAlAs/GaAs laser with an external dispersive resonator”, Kvantovaya Elektronika, 16:5 (1989), 957–960 [Sov J Quantum Electron, 19:5 (1989), 622–624]
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    Квантовая электроника Quantum Electronics
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