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Kvantovaya Elektronika, 1989, Volume 16, Number 4, Pages 675–678 (Mi qe7884)  

Lasers

Injection Lasers made of PbTe whisker crystals

V. F. Banar', D. V. Gitsu, I. I. Zasavitskii, G. V. Flusov
Abstract: Whisker PbTe crystals 70–120 μm in diameter were used as injection lasers with two p-n junction geometries: transverse and coaxial. Lasing was observed in the pulsed regime at T = 4.2 K (λ = 6.5 μm). The mode structure of the emission spectra was difficult to control because electrical and optical quality of whisker crystals was not sufficiently high. Total internal reflection modes and isotropic angular distributions in the p-n junction plane were observed for the transverse diodes.
Received: 10.05.1988
English version:
Soviet Journal of Quantum Electronics, 1989, Volume 19, Issue 4, Pages 441–442
DOI: https://doi.org/10.1070/QE1989v019n04ABEH007884
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.By, 42.70.Hj, 42.70.Nq, 42.60.Da, 42.60.Jf
Language: Russian


Citation: V. F. Banar', D. V. Gitsu, I. I. Zasavitskii, G. V. Flusov, “Injection Lasers made of PbTe whisker crystals”, Kvantovaya Elektronika, 16:4 (1989), 675–678 [Sov J Quantum Electron, 19:4 (1989), 441–442]
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