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Kvantovaya Elektronika, 1989, Volume 16, Number 4, Pages 663–671 (Mi qe7881)  

This article is cited in 1 scientific paper (total in 1 paper)

Lasers

Semiconductor laser locked by external radiation

K. B. Dedushenko, A. N. Mamaev
Abstract: Injection locking of a semiconductor laser by external radiation is investigated. Equations describing a locked laser are derived and solved allowing for emission of spontaneous radiation and excitation of stray modes. An analysis is made of the stability of steady-state solutions. It is shown that incorrect results are obtained if a locked laser is analyzed in a single-mode approximation and spontaneous emission is ignored in the case of positive frequency detuning. Inclusion of stray modes reduces permissible values of the phase shift between the injected and own laser radiation, and gives rise to an asymmetry of the dependence of the phase shift on the detuning. The dependence of the output power on the injected power is used to find the spontaneous emission factor. Experiments are reported in which the output power sometimes exhibits fluctuations in the locked state.
Received: 02.02.1988
English version:
Soviet Journal of Quantum Electronics, 1989, Volume 19, Issue 4, Pages 433–438
DOI: https://doi.org/10.1070/QE1989v019n04ABEH007881
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.Fc, 42.60.Jf
Language: Russian


Citation: K. B. Dedushenko, A. N. Mamaev, “Semiconductor laser locked by external radiation”, Kvantovaya Elektronika, 16:4 (1989), 663–671 [Sov J Quantum Electron, 19:4 (1989), 433–438]
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  • https://www.mathnet.ru/eng/qe/v16/i4/p663
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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