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Kvantovaya Elektronika, 1989, Volume 16, Number 3, Pages 631–637 (Mi qe7875)  

This article is cited in 14 scientific papers (total in 14 papers)

Optoelectronics, laser applications

Selective reflection from a glass–gas interface at high angles of incidence of light

A. M. Akulshin, V. L. Velichansky, A. I. Zherdev, A. S. Zibrov, V. I. Malakhova, V. V. Nikitin, V. A. Sautenkov, G. G. Kharisov
Abstract: Resonance lines of rubidium and cesium and injection lasers were used in a study of selective reflection from an interface between a transparent dielectric and an absorbing gas as a function of the angle of incidence of radiation and of its polarization, and of the concentration of atoms in a cell. Selective reflection resonances were observed against zero background when radiation was incident on the cell at the Brewster angle. The conditions for observation of selective frustrated total internal reflection (FTIR) were determined analytically and experimentally. The maximum reflection coefficient obtained was 95 ± 2%, which was 10 times greater than the nonresonant reflection coefficient. The spectral width of the region where FTIR was observed ranged from 0.1 to 1.5 cm – 1, depending on the concentration of atoms and the angle of incidence. The FTIR eifect was used to construct a selective component which made it possible to ensure narrow-band cw operation of an injection laser with an external resonator. Other potential applications of the FTIR effect in quantum electronics were also considered.
Received: 05.10.1987
English version:
Soviet Journal of Quantum Electronics, 1989, Volume 19, Issue 3, Pages 416–419
DOI: https://doi.org/10.1070/QE1989v019n03ABEH007875
Bibliographic databases:
Document Type: Article
UDC: 621.373.826
PACS: 78.20.Ci, 78.40.Pg, 68.47.-b, 78.68.+m
Language: Russian


Citation: A. M. Akulshin, V. L. Velichansky, A. I. Zherdev, A. S. Zibrov, V. I. Malakhova, V. V. Nikitin, V. A. Sautenkov, G. G. Kharisov, “Selective reflection from a glass–gas interface at high angles of incidence of light”, Kvantovaya Elektronika, 16:3 (1989), 631–637 [Sov J Quantum Electron, 19:3 (1989), 416–419]
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  • This publication is cited in the following 14 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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