Numerical calculations of the characteristics of recombination pumping by a low-temperature plasma

An analysis is made of the processes of recombination in a multiply charged totally ionized optically thin plasma. The method of a steady-state sink is used to calculate numerically the gain as well as the coefficients of nonresonant absorption, recombination, and heat evolution in an electron gas as a function of the electron temperature, electron density, and nuclear charge of the ions. Several new approximations are proposed. The range of validity of such calculations is set out for the first time.