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Lasers
Relationship between frequency deviation exhibited by directly modulated semiconductor lasers and differential electrical characteristics of an injecting p-n junction
A. G. Bulushev, E. M. Dianov, O. G. Okhotnikov, V. M. Paramonov
Abstract:
A simple relationship is established between the residual differential resistance of an injecting p-n junction in a semiconductor laser and the frequency deviation (chirp) of the radiation emitted by this laser under direct current modulation conditions. It is shown that the proposed model is in satisfactory agreement with the results of an experimental investigation of GaAs/AlGaAs lasers.
Received: 22.06.1988
Citation:
A. G. Bulushev, E. M. Dianov, O. G. Okhotnikov, V. M. Paramonov, “Relationship between frequency deviation exhibited by directly modulated semiconductor lasers and differential electrical characteristics of an injecting p-n junction”, Kvantovaya Elektronika, 16:3 (1989), 481–483 [Sov J Quantum Electron, 19:3 (1989), 320–321]
Linking options:
https://www.mathnet.ru/eng/qe7842 https://www.mathnet.ru/eng/qe/v16/i3/p481
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