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Kvantovaya Elektronika, 1989, Volume 16, Number 3, Pages 481–483 (Mi qe7842)  

Lasers

Relationship between frequency deviation exhibited by directly modulated semiconductor lasers and differential electrical characteristics of an injecting p-n junction

A. G. Bulushev, E. M. Dianov, O. G. Okhotnikov, V. M. Paramonov
Abstract: A simple relationship is established between the residual differential resistance of an injecting p-n junction in a semiconductor laser and the frequency deviation (chirp) of the radiation emitted by this laser under direct current modulation conditions. It is shown that the proposed model is in satisfactory agreement with the results of an experimental investigation of GaAs/AlGaAs lasers.
Received: 22.06.1988
English version:
Soviet Journal of Quantum Electronics, 1989, Volume 19, Issue 3, Pages 320–321
DOI: https://doi.org/10.1070/QE1989v019n03ABEH007842
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.Jf, 42.60.Fc
Language: Russian


Citation: A. G. Bulushev, E. M. Dianov, O. G. Okhotnikov, V. M. Paramonov, “Relationship between frequency deviation exhibited by directly modulated semiconductor lasers and differential electrical characteristics of an injecting p-n junction”, Kvantovaya Elektronika, 16:3 (1989), 481–483 [Sov J Quantum Electron, 19:3 (1989), 320–321]
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