Low-threshold buried 1.3-μm injection lasers with two-channel lateral confinement and n-type InP substrates

A description is given of planar stripe lasers with two-channel confinement in an InGaAsP/InP heterostructure with a three-layer waveguide. These lasers operate continuously in the spectral range 1.3 μm. Typical threshold currents at T = 300 K are 20–30 mA (with the minimum value 16 mA). An output power of 10 mW is obtainable up to 80°C and the maximum temperature at which cw operation is observed exceeds 100°C. The maximum output power at T = 300 K is 42 mW. An analysis is made of the relationship between the geometry of a heterostructure and the efficiency of current confinement in lasers of this type. Planar stripe heterolasers with two-channel confinement are compared with lasers based on a buried mesastripe structure.