Low-threshold InGaP/InGaAsP lasers with the emission wavelength 1.02 μm

Injection lasers based on InGaP/InGaAsP quantum-well structures, emitting at 1.02 μm, were made. A weak temperature dependence of the threshold current (with the characteristic temperature T₀ = 180 K) of these lasers made it possible to dispense with the cooling units and output power control systems during operation. This increased the reliability and reduced the cost of the lasers.