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Kvantovaya Elektronika, 1985, Volume 12, Number 9, Pages 1948–1951 (Mi qe7740)  

This article is cited in 4 scientific papers (total in 4 papers)

Brief Communications

Changes in the diffraction efficiency of grating structures formed in thin films of glassy chalcogenide semiconductors by neutron irradiation

A. M. Andriesh, V. P. Zhornik, A. V. Mironos, A. S. Smirnova
Full-text PDF (791 kB) Citations (4)
Abstract: A study was made of the influence of sufficiently large neutron doses on the properties of diffraction grating structures formed in thin films of glassy chalcogenide semiconductors of the As–S system. The changes in the diffraction efficiency and in the sensitivity of the material depended strongly on the film composition. A method was found for increasing considerably the diffraction efficiency and sensitivity of some compositions by irradiation.
Received: 26.11.1984
English version:
Soviet Journal of Quantum Electronics, 1985, Volume 15, Issue 9, Pages 1284–1287
DOI: https://doi.org/10.1070/QE1985v015n09ABEH007740
Bibliographic databases:
Document Type: Article
UDC: 621.372.8.029.7
PACS: 61.80.Hg, 61.82.Fk, 42.79.Dj
Language: Russian


Citation: A. M. Andriesh, V. P. Zhornik, A. V. Mironos, A. S. Smirnova, “Changes in the diffraction efficiency of grating structures formed in thin films of glassy chalcogenide semiconductors by neutron irradiation”, Kvantovaya Elektronika, 12:9 (1985), 1948–1951 [Sov J Quantum Electron, 15:9 (1985), 1284–1287]
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  • https://www.mathnet.ru/eng/qe7740
  • https://www.mathnet.ru/eng/qe/v12/i9/p1948
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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