Thermal conditions in high-power monolithic linear injection-laser arrays

An analysis is reported of the kinetics of the temperature profiles in monolithic linear arrays of semiconductor GaAs/AlGaAs injection lasers emitting at a wavelength of 810 nm. Quasi-cw and cw operation and various pump parameters are considered as a function of the heat sink design. It is found that in monolithic linear arrays with a specific output power of 50 W cm^–1 and with a global efficiency of 30%, mounted on a heat sink made of BeO, the temperature of the active region of the lasers increases by 45°C when the pulse duration is 1 ms. A calculation model is used to account for the experimental dependences of the output parameters of linear arrays on the pump conditions, and design data are obtained for two-dimensional arrays suitable for pumping solid-state lasers.