A. A. Kaminskii, A. V. Butashin, S. N. Bagayev, “New Nd3+:BaLu2F8 laser crystal”, Kvantovaya Elektronika, 23:9 (1996), 773–774 [Quantum Electron., 26:9 (1996), 753

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Kvantovaya Elektronika, 1996, Volume 23, Number 9, Pages 773–774 (Mi qe771)

This article is cited in 1 scientific paper (total in 1 paper)

Letters to the editor

New Nd³⁺:BaLu₂F₈ laser crystal

A. A. Kaminskii^a, A. V. Butashin^a, S. N. Bagayev^b

^a Institute of Cristallography Russian Academy of Sciences, Moscow
^b Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk

Full-text PDF (147 kB) Citations (1)

Abstract: A new Nd³⁺:BaLu₂F₈ laser crystal was grown. It is capable of low-threshold pulsed lasing (⁴F_3/2 → ⁴I_11/2 channel) at 300 K under flashlamp pumping. Preliminary results are reported of a study of the spectral and luminescence characteristics of this crystal and of the excitation of low-threshold lasing on two inter-Stark transitions in the ⁴F_3/2 → ⁴I_11/2 channel of the Nd³⁺ ions.

Received: 01.01.1996

English version:
Quantum Electronics, 1996, Volume 26, Issue 9, Pages 753–754
DOI: https://doi.org/10.1070/QE1996v026n09ABEH000771

Bibliographic databases:

Document Type: Article

PACS: 42.70.Hj, 42.55.Rz

Language: Russian

Citation: A. A. Kaminskii, A. V. Butashin, S. N. Bagayev, “New Nd³⁺:BaLu₂F₈ laser crystal”, Kvantovaya Elektronika, 23:9 (1996), 773–774 [Quantum Electron., 26:9 (1996), 753–754]

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https://www.mathnet.ru/eng/qe771

https://www.mathnet.ru/eng/qe/v23/i9/p773

This publication is cited in the following 1 articles:

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