Mechanical stresses in AlGaAs/GaAs quantum-well heterolasers

A comparative analysis was made of mechanical stresses in AlGaAs/GaAs heterolasers with quantum-well undoped lasers. These stresses were due to a number of factors: the difference between the thermal expansion coefficients, absorption of radiation by dislocations, flow of carriers to dislocations, and loss of heat from the active region of the heterodiode to a heat sink. The residual stresses predominated over all the other stresses.