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Kvantovaya Elektronika, 1985, Volume 12, Number 9, Pages 1814–1818 (Mi qe7659)  

Fabrication and investigation of integrated-optics CdSxSe1–x waveguides

Z. È. Buachidze, I. V. Vasilishcheva, V. N. Morozov, V. A. Pletnev, A. S. Semenov, P. V. Shapkin
Abstract: The diffusion of selenium in CdS was used to fabricate planar and strip waveguides with losses in the range 3–5 dB/cm at the wavelength of 0.63 μ. A study was made of the influence of the diffusion conditions on the main waveguide parameters. A mathematical model was developed for determining the distribution of the refractive index with depth in a crystal for different diffusion regimes. A single substrate was used to form waveguides with band gaps of 2.41 and 2.47 eV. The coupling efficiency of these waveguides exceeded 90%.
Received: 04.04.1985
English version:
Soviet Journal of Quantum Electronics, 1985, Volume 15, Issue 9, Pages 1201–1204
DOI: https://doi.org/10.1070/QE1985v015n09ABEH007659
Bibliographic databases:
Document Type: Article
UDC: 621.372.8.029.7
PACS: 42.82.Et, 42.79.Gn, 42.82.Cr, 42.70.Nq
Language: Russian


Citation: Z. È. Buachidze, I. V. Vasilishcheva, V. N. Morozov, V. A. Pletnev, A. S. Semenov, P. V. Shapkin, “Fabrication and investigation of integrated-optics CdSxSe1–x waveguides”, Kvantovaya Elektronika, 12:9 (1985), 1814–1818 [Sov J Quantum Electron, 15:9 (1985), 1201–1204]
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