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Fabrication and investigation of integrated-optics CdSxSe1–x waveguides
Z. È. Buachidze, I. V. Vasilishcheva, V. N. Morozov, V. A. Pletnev, A. S. Semenov, P. V. Shapkin
Abstract:
The diffusion of selenium in CdS was used to fabricate planar and strip waveguides with losses in the range 3–5 dB/cm at the wavelength of 0.63 μ. A study was made of the influence of the diffusion conditions on the main waveguide parameters. A mathematical model was developed for determining the distribution of the refractive index with depth in a crystal for different diffusion regimes. A single substrate was used to form waveguides with band gaps of 2.41 and 2.47 eV. The coupling efficiency of these waveguides exceeded 90%.
Received: 04.04.1985
Citation:
Z. È. Buachidze, I. V. Vasilishcheva, V. N. Morozov, V. A. Pletnev, A. S. Semenov, P. V. Shapkin, “Fabrication and investigation of integrated-optics CdSxSe1–x waveguides”, Kvantovaya Elektronika, 12:9 (1985), 1814–1818 [Sov J Quantum Electron, 15:9 (1985), 1201–1204]
Linking options:
https://www.mathnet.ru/eng/qe7659 https://www.mathnet.ru/eng/qe/v12/i9/p1814
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