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Kvantovaya Elektronika, 1990, Volume 17, Number 11, Pages 1418–1423 (Mi qe7496)  

This article is cited in 2 scientific papers (total in 2 papers)

Lasers

Stimulated emission mechanisms of a λ = 585.3 nm gas-discharge neon–hydrogen laser

E. L. Latush, M. F. Sèm, G. D. Chebotarev
Abstract: An investigation was made of the mechanisms of pulsed lasing due to the 585.3 nm NeI transition in an Ne–H2 mixture in hollow-cathode and longitudinal discharges. It was established that lasing in the afterglow of both types of discharge was due to pumping of the upper active level mainly by three-body recombination of neon ions, whereas lasing during a current pulse in a hollow-cathode discharge was due to electron impact pumping. It was found that, in a longitudinal discharge at high currents, a recombination nonequilibrium state could form even during passage of the current and then lasing during a current pulse was due to recombination pumping. It was established that the depopulation of the lower active level as a result of the Penning reaction with hydrogen was selective. It was found that elastic collisions with electrons had a strong influence on the temporal characteristics of the lasing in a recombining plasma.
Received: 26.01.1990
English version:
Soviet Journal of Quantum Electronics, 1990, Volume 20, Issue 11, Pages 1327–1331
DOI: https://doi.org/10.1070/QE1990v020n11ABEH007496
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.823
PACS: 42.55.Lt, 42.60.Jf, 52.80.Sm
Language: Russian


Citation: E. L. Latush, M. F. Sèm, G. D. Chebotarev, “Stimulated emission mechanisms of a λ = 585.3 nm gas-discharge neon–hydrogen laser”, Kvantovaya Elektronika, 17:11 (1990), 1418–1423 [Sov J Quantum Electron, 20:11 (1990), 1327–1331]
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  • https://www.mathnet.ru/eng/qe/v17/i11/p1418
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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