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Kvantovaya Elektronika, 1997, Volume 24, Number 1, Pages 17–19 (Mi qe726)  

This article is cited in 31 scientific papers (total in 31 papers)

Lasers

Lasing characteristics of a diode-pumped Nd3+ :CaGdAlO4 crystal

A. A. Lagatskiia, N. V. Kuleshova, V. G. Shcherbitskiia, V. F. Kleptsyna, V. P. Mikhailova, V. G. Ostroumovb, G. Huberb

a International Laser Center, Belarus State Technical University, Minsk
b The University of Hamburg, Germany
Abstract: A new Nd3+-doped CaGdAlO4 laser crystal was investigated. This crystal was grown by the Czochralski method. The atomic concentration of Nd3+ in the melt was 2%. The absorption and luminescence spectra were analysed and the Stark structure of the upper and lower active levels was determined. The lifetime of the upper level was ~140 μs. The stimulated emission cross section at the 1078 nm wavelength was 1.1 × 10–19cm2 for the E || c polarisation. A GaAlAs diode, with an output power of 3 W emitting at the wavelength 806.5 nm, was used as the pump source. The slope efficiency was 37% at the 1078 nm wavelength when the output mirror transmission was 5%. The output radiation power of the crystal laser was 360 mW when the absorbed pump power was 1.29 W.
Received: 26.04.1996
English version:
Quantum Electronics, 1997, Volume 27, Issue 1, Pages 15–17
DOI: https://doi.org/10.1070/QE1997v027n01ABEH000726
Bibliographic databases:
Document Type: Article
PACS: 42.55.Rz, 42.55.Xi, 42.70.Hj
Language: Russian


Citation: A. A. Lagatskii, N. V. Kuleshov, V. G. Shcherbitskii, V. F. Kleptsyn, V. P. Mikhailov, V. G. Ostroumov, G. Huber, “Lasing characteristics of a diode-pumped Nd3+ :CaGdAlO4 crystal”, Kvantovaya Elektronika, 24:1 (1997), 17–19 [Quantum Electron., 27:1 (1997), 15–17]
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  • This publication is cited in the following 31 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Квантовая электроника Quantum Electronics
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