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Light-emission and degradation characteristics of InGaAsP/lnP heterostructures
P. G. Eliseev, B. N. Sverdlov, I. S. Tsimberova
Abstract:
A study was made of double heterostructures fabricated by liquid phase epitaxy and emitting at wavelengths in the range 1.06–1.6μ. The maximum values of the external efficiency reached 10% at the wavelength of 1.06μ and 5% at 1.3μ. A study was made of the homogeneity of the emission pattern by visualization of the distribution in the near-field zone with the aid of an infrared television microscope. This revealed dark spots formed as a result of ageing of the heterostructure. It was found that when a certain dose was reached, the radiation defects stabilized the output power of heterostructures over a considerable operating period. Accelerated life tests estimated that the service life should be at least (60–100)×103h.
Received: 05.05.1985
Citation:
P. G. Eliseev, B. N. Sverdlov, I. S. Tsimberova, “Light-emission and degradation characteristics of InGaAsP/lnP heterostructures”, Kvantovaya Elektronika, 13:7 (1986), 1376–1380 [Sov J Quantum Electron, 16:7 (1986), 902–905]
Linking options:
https://www.mathnet.ru/eng/qe7193 https://www.mathnet.ru/eng/qe/v13/i7/p1376
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Abstract page: | 104 | Full-text PDF : | 73 | First page: | 1 |
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