I. V. Akimova, T. I. Berezina, A. N. Pechenov, V. I. Reshetov, L. E. Reshetova, P. V. Shapkin, “Influence of excess sulfur pressure during growth of CdS crystals on the characteristics of electron-beam-excited lasers”, Kvantovaya Elektronika, 12:6 (1985), 1307–1309 [Sov J Quantum Electron, 15:6 (1985), 867

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Kvantovaya Elektronika, 1985, Volume 12, Number 6, Pages 1307–1309 (Mi qe7178)

Brief Communications

Influence of excess sulfur pressure during growth of CdS crystals on the characteristics of electron-beam-excited lasers

I. V. Akimova, T. I. Berezina, A. N. Pechenov, V. I. Reshetov, L. E. Reshetova, P. V. Shapkin

Full-text PDF (527 kB)

Abstract: An investigation was made of the influence of an excess sulfur partial pressure in the range 10^–3– (2×10²) Torr on the low-temperature photoluminescence spectra and also on the lasing threshold and the differential efficiency of electron-beam-excited lasers. The best laser characteristics, including degradation stability, were obtained for sulfur pressures of 1–10 Torr.

Received: 04.10.1984
Revised: 10.12.1984

English version:
Soviet Journal of Quantum Electronics, 1985, Volume 15, Issue 6, Pages 867–868
DOI: https://doi.org/10.1070/QE1985v015n06ABEH007178

Bibliographic databases:

Document Type: Article

UDC: 621.373.826.038.825.4

PACS: 42.55.Rz, 42.70.Mp, 78.55.Hx, 42.60.Lh, 81.10.Bk

Language: Russian

Citation: I. V. Akimova, T. I. Berezina, A. N. Pechenov, V. I. Reshetov, L. E. Reshetova, P. V. Shapkin, “Influence of excess sulfur pressure during growth of CdS crystals on the characteristics of electron-beam-excited lasers”, Kvantovaya Elektronika, 12:6 (1985), 1307–1309 [Sov J Quantum Electron, 15:6 (1985), 867–868]

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