Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 1985, Volume 12, Number 6, Pages 1307–1309 (Mi qe7178)  

Brief Communications

Influence of excess sulfur pressure during growth of CdS crystals on the characteristics of electron-beam-excited lasers

I. V. Akimova, T. I. Berezina, A. N. Pechenov, V. I. Reshetov, L. E. Reshetova, P. V. Shapkin
Abstract: An investigation was made of the influence of an excess sulfur partial pressure in the range 10–3– (2×102) Torr on the low-temperature photoluminescence spectra and also on the lasing threshold and the differential efficiency of electron-beam-excited lasers. The best laser characteristics, including degradation stability, were obtained for sulfur pressures of 1–10 Torr.
Received: 04.10.1984
Revised: 10.12.1984
English version:
Soviet Journal of Quantum Electronics, 1985, Volume 15, Issue 6, Pages 867–868
DOI: https://doi.org/10.1070/QE1985v015n06ABEH007178
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Rz, 42.70.Mp, 78.55.Hx, 42.60.Lh, 81.10.Bk
Language: Russian


Citation: I. V. Akimova, T. I. Berezina, A. N. Pechenov, V. I. Reshetov, L. E. Reshetova, P. V. Shapkin, “Influence of excess sulfur pressure during growth of CdS crystals on the characteristics of electron-beam-excited lasers”, Kvantovaya Elektronika, 12:6 (1985), 1307–1309 [Sov J Quantum Electron, 15:6 (1985), 867–868]
Linking options:
  • https://www.mathnet.ru/eng/qe7178
  • https://www.mathnet.ru/eng/qe/v12/i6/p1307
  • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024