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Kvantovaya Elektronika, 1985, Volume 12, Number 6, Pages 1302–1304 (Mi qe7176)  

Brief Communications

Utilization of the selectivity of dissolution of glassy chalcogenide semiconductor films in the formation of passive integrated-optics components

Yu. A. Bykovskiĭ, A. V. Mironos, V. L. Smirnov, V. I. Soldatov
Abstract: A study was made of the influence of the stoichiometry profile of films in the As–S system on the dynamics of their dissolution in an alkali etchant. It was found that the surface changes in the stoichiometry of As–S films exposed to laser radiation influenced the rate of dissolution. The dynamics of dissolution of glassy chalcogenide semiconductor films with given stoichiometry profiles was analyzed and methods of formation of grating structures with a high diffraction efficiency were considered.
Received: 01.08.1984
Revised: 03.12.1984
English version:
Soviet Journal of Quantum Electronics, 1985, Volume 15, Issue 6, Pages 863–864
DOI: https://doi.org/10.1070/QE1985v015n06ABEH007176
Bibliographic databases:
Document Type: Article
UDC: 621.372.8.029.7
PACS: 42.82.Et, 78.66.Jg, 81.65.Cf, 42.79.Dj, 61.50.Nw
Language: Russian


Citation: Yu. A. Bykovskiĭ, A. V. Mironos, V. L. Smirnov, V. I. Soldatov, “Utilization of the selectivity of dissolution of glassy chalcogenide semiconductor films in the formation of passive integrated-optics components”, Kvantovaya Elektronika, 12:6 (1985), 1302–1304 [Sov J Quantum Electron, 15:6 (1985), 863–864]
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