Abstract:
An investigation was made of the relationship between the excess 1f 1/f noise and electrical characteristics of InGaAsP heterojunction lasers. The excess noise level was found to be governed by the nonradiative current in these lasers. Degradation of these laser diodes resulted in an increase in the 1/f noise.
Citation:
I. A. Garmash, V. N. Morozov, A. T. Semenov, M. A. Sumarokov, V. R. Shidlovskiĭ, “Leakage currents and 1/f noise in buried InGaAsP/InP heterostructure lasers”, Kvantovaya Elektronika, 17:8 (1990), 964–968 [Sov J Quantum Electron, 20:8 (1990), 882–886]
Linking options:
https://www.mathnet.ru/eng/qe7148
https://www.mathnet.ru/eng/qe/v17/i8/p964
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