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Kvantovaya Elektronika, 1990, Volume 17, Number 8, Pages 964–968 (Mi qe7148)  

This article is cited in 5 scientific papers (total in 5 papers)

Lasers

Leakage currents and 1/f noise in buried InGaAsP/InP heterostructure lasers

I. A. Garmash, V. N. Morozov, A. T. Semenov, M. A. Sumarokov, V. R. Shidlovskiĭ
Abstract: An investigation was made of the relationship between the excess 1f 1/f noise and electrical characteristics of InGaAsP heterojunction lasers. The excess noise level was found to be governed by the nonradiative current in these lasers. Degradation of these laser diodes resulted in an increase in the 1/f noise.
Received: 03.01.1989
Revised: 31.01.1990
English version:
Soviet Journal of Quantum Electronics, 1990, Volume 20, Issue 8, Pages 882–886
DOI: https://doi.org/10.1070/QE1990v020n08ABEH007148
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.By, 42.60.Mi, 42.70.Hj, 42.70.Nq, 42.60.Jf
Language: Russian


Citation: I. A. Garmash, V. N. Morozov, A. T. Semenov, M. A. Sumarokov, V. R. Shidlovskiĭ, “Leakage currents and 1/f noise in buried InGaAsP/InP heterostructure lasers”, Kvantovaya Elektronika, 17:8 (1990), 964–968 [Sov J Quantum Electron, 20:8 (1990), 882–886]
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  • https://www.mathnet.ru/eng/qe7148
  • https://www.mathnet.ru/eng/qe/v17/i8/p964
  • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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