Determination of the parameters of pulsed radiation using semiconductor–metal phase transitions in vanadium dioxide

A study was made of the possibility of determining the cross-sectional area of a beam S and the energy E of pulsed radiation from photoinduced abrupt changes in the electrical resistivity Δρ and in the transmission coefficient of light Δt associated with the semiconductor-metal phase transition VO₂. The dependences of the amplitude and duration of the photoresponse pulses Δρ and Δτ on E and S were determined and the shape of these pulses was analyzed. It was established that the dependences of the amplitudes and decay times of the Δρ and Δt pulses could be used to determine simultaneously both S and E of pulsed radiation.