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Kvantovaya Elektronika, 1981, Volume 8, Number 6, Pages 1336–1338 (Mi qe7088)  

Brief Communications

Problem of forecasting the reliability of Ga1–xAlxAs–GaAs heterojunction lasers

N. P. Chernousov, K. I. Inozemtsev, A. V. Boroshnev
Abstract: A study was made of the possibility of forecasting the service life of Ga1–xAlxAs–GaAs heterolasers from the relative intensity of the emission band of 1.0 eV energy in the electroluminescence spectrum, measured before the use of these devices as lasers. It was found that there was a correlation between the service life of heterolasers and the intensity of the 1.0 eV band for time spans from a few to many thousands of hours.
Received: 11.11.1980
English version:
Soviet Journal of Quantum Electronics, 1981, Volume 11, Issue 6, Pages 802–803
DOI: https://doi.org/10.1070/QE1981v011n06ABEH007088
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px
Language: Russian


Citation: N. P. Chernousov, K. I. Inozemtsev, A. V. Boroshnev, “Problem of forecasting the reliability of Ga1–xAlxAs–GaAs heterojunction lasers”, Kvantovaya Elektronika, 8:6 (1981), 1336–1338 [Sov J Quantum Electron, 11:6 (1981), 802–803]
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    Квантовая электроника Quantum Electronics
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