Influence of the eiectron–phonon interaction on an inverted population in a semiconductor superlattice and a semiconductor size-quantized film in a magnetic field

Analytic expressions are obtained for the coefficient representing phonon emission as a result of transitions between magnetic film levels and the magnetoacoustic subbands, and also for the coefficient of absorption of electromagnetic radiation under the eiectron–phonon interaction conditions. It is shown that under certain conditions these transitions cannot influence the self-excitation of a semiconductor laser.