Dynamic characteristics of a GaAs injection amplifier

Theoretical and experimental investigations were made of the dynamic characteristics of a semiconductor injection amplifier operating under linear and saturation (by the input signal) regimes. It was found that in the nonlinear regime the response time of a semiconductor amplifier subjected to pulse-code modulation is limited to a value of the order of the spontaneous recombination time. Some potential applications of such nonlinear amplifiers in fast-response communication systems are pointed out.