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Kvantovaya Elektronika, 1981, Volume 8, Number 5, Pages 1073–1078 (Mi qe6944)  

Influence of adhesion on processes of laser heating and damage to thin absorbing films

E. B. Yakovlev
Abstract: A phenomenological approach is proposed to allow for the influence of adhesion on the rate of heating of thin films exposed to laser radiation. It is found that the adhesion determines the mechanism of damage to thin films in the advanced damage threshold regime. Conditions for which the melt rolling mechanism of damage to thin films predominates in the advanced damage threshold regime are determined.
Received: 24.09.1980
English version:
Soviet Journal of Quantum Electronics, 1981, Volume 11, Issue 5, Pages 637–640
DOI: https://doi.org/10.1070/QE1981v011n05ABEH006944
Bibliographic databases:
Document Type: Article
UDC: 539.216.22
PACS: 61.80.-x, 68.60.+q, 42.60.He
Language: Russian


Citation: E. B. Yakovlev, “Influence of adhesion on processes of laser heating and damage to thin absorbing films”, Kvantovaya Elektronika, 8:5 (1981), 1073–1078 [Sov J Quantum Electron, 11:5 (1981), 637–640]
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