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Kvantovaya Elektronika, 1986, Volume 13, Number 6, Pages 1161–1168 (Mi qe6890)  

Maximum specific energy deposited in hydrogen and role of VV processes

N. G. Basov, V. A. Danilychev, V. A. Dolgikh, O. M. Kerimov, Yu. F. Myznikov, A. M. Soroka
Abstract: It was found experimentally that a specific input energy of ~1J·cm–3·atm–1(~1 eV per molecule) could be achieved for hydrogen. This input energy was attained only when the pump pulse duration was less than the characteristic population time of higher vibrational levels of H2 because of the VV processes. The drift velocities of electrons and the effective recombination constants of H2 and its mixtures with rare gases were determined.
Received: 28.02.1985
English version:
Soviet Journal of Quantum Electronics, 1986, Volume 16, Issue 6, Pages 763–768
DOI: https://doi.org/10.1070/QE1986v016n06ABEH006890
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.823
PACS: 42.60.Jf, 42.55.Lt
Language: Russian


Citation: N. G. Basov, V. A. Danilychev, V. A. Dolgikh, O. M. Kerimov, Yu. F. Myznikov, A. M. Soroka, “Maximum specific energy deposited in hydrogen and role of VV processes”, Kvantovaya Elektronika, 13:6 (1986), 1161–1168 [Sov J Quantum Electron, 16:6 (1986), 763–768]
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    Квантовая электроника Quantum Electronics
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