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Kvantovaya Elektronika, 1981, Volume 8, Number 4, Pages 880–882 (Mi qe6877)  

This article is cited in 1 scientific paper (total in 1 paper)

Brief Communications

Bistable cw injection heterolaser

I. S. Goldobin, V. D. Kurnosov, V. N. Luk'yanov, G. T. Pak, A. T. Semenov, N. V. Shelkov, S. D. Yakubovich, I. V. Yashumov
Full-text PDF (636 kB) Citations (1)
Abstract: It was found experimentally that GaAlAs heterolasers exhibit, like gallium arsenide homolasers, bistable operation under inhomogeneous injection conditions. The width of the hysteresis loop of the watt-ampere characteristic, governing the range of existence of bistable operation, reached 20 mA. Transient abrupt switching was observed.
Received: 15.09.1980
English version:
Soviet Journal of Quantum Electronics, 1981, Volume 11, Issue 4, Pages 526–527
DOI: https://doi.org/10.1070/QE1981v011n04ABEH006877
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.824.4
PACS: 42.55.Px
Language: Russian


Citation: I. S. Goldobin, V. D. Kurnosov, V. N. Luk'yanov, G. T. Pak, A. T. Semenov, N. V. Shelkov, S. D. Yakubovich, I. V. Yashumov, “Bistable cw injection heterolaser”, Kvantovaya Elektronika, 8:4 (1981), 880–882 [Sov J Quantum Electron, 11:4 (1981), 526–527]
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  • https://www.mathnet.ru/eng/qe/v8/i4/p880
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Квантовая электроника Quantum Electronics
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