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Brief Communications
Intensive evaporation of germanium and silicon by millisecond laser radiation pulses
V. A. Batanov, I. A. Bufetov, S. G. Lukishova, V. B. Fedorov
Abstract:
An experimental investigation was made of the intensive evaporation of germanium and silicon by laser pulses of I ≈ 106–107 W/cm2 intensity. The specific recoil momentum and ejected mass, and the depth of the crater in a target were determined as a function of the radiation intensity. The reflection coefficient was determined as a function of I. The experimental results indicated that the behavior of these two materials under the action of high-power optical radiation was similar to the behavior of metals. The experimental results were in satisfactory agreement with the theory of intensive evaporation of metals based on the assumption that the process involved the liquid–vapor phase transition.
Received: 08.10.1973
Citation:
V. A. Batanov, I. A. Bufetov, S. G. Lukishova, V. B. Fedorov, “Intensive evaporation of germanium and silicon by millisecond laser radiation pulses”, Kvantovaya Elektronika, 1:2 (1974), 436–439 [Sov J Quantum Electron, 4:2 (1974), 248–249]
Linking options:
https://www.mathnet.ru/eng/qe6712 https://www.mathnet.ru/eng/qe/v1/i2/p436
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Abstract page: | 141 | Full-text PDF : | 81 |
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