Influence of the excitation inhomogeneity on the threshold of electron-beam-pumped lasers

A theoretical analysis is given of the influence of the pumping inhomogeneity on the stimulated emission threshold of electron-beam-pumped semiconductor lasers. This inhomogeneity may be due to an inhomogeneous distribution of the ionization leases with depth in the active region or due to an inhomogeneous distribution of the current density in the incident electron beam. Estimates are obtained of the dependence of the threshold current density on the electron energy and the effective beam diameter, and on the parameters of the optical resonator.