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Kvantovaya Elektronika, 1996, Volume 23, Number 4, Pages 318–320 (Mi qe657)  

Lasers

Influence of contact layers on the thermal properties of PbSe/PbSnSeTe lasers

L. P. Bychkova, O. I. Davarashvili

Tbilisi Ivane Javakhishvili State University, Georgia
Abstract: Optimisation of the thermal regime (with the aim of minimising overheating of the active region) was achieved by reducing the thicknesses of the confinement and contact layers, and the width of the active region in PbSe/PbSnSeTe double-heterostructure semiconductor lasers. When the pump current density was 3 kA cm–2 (T = 77 K), the temperature of the active region rose by ΔT = 17 and 26 K in structures with the confinement layer 2 and 4 μm thick, respectively.
Received: 01.01.1996
English version:
Quantum Electronics, 1996, Volume 26, Issue 4, Pages 310–312
DOI: https://doi.org/10.1070/QE1996v026n04ABEH000657
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Lh
Language: Russian


Citation: L. P. Bychkova, O. I. Davarashvili, “Influence of contact layers on the thermal properties of PbSe/PbSnSeTe lasers”, Kvantovaya Elektronika, 23:4 (1996), 318–320 [Quantum Electron., 26:4 (1996), 310–312]
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    Квантовая электроника Quantum Electronics
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