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Kvantovaya Elektronika, 1996, Volume 23, Number 3, Pages 284–286 (Mi qe647)  

This article is cited in 2 scientific papers (total in 2 papers)

Laser applications and other topics in quantum electronics

Fast-response photodetectors with a large active area, based on Schottky-barrier semiconductor structures

S. V. Averina, Yu. V. Gulyaeva, M. D. Dmitrievb, V. T. Potapova, R. Sachotc

a Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
b НИИ Сапфир
c Institute of Microelectronics and Optoelectronics, Federal Institute of Technology, Lausanne, Switzerland
Full-text PDF (164 kB) Citations (2)
Abstract: A two-dimensional model is used to investigate the characteristics of the pulsed response and efficiency of metal—semiconductor—metal photodiode structures made of GaAs. The active area of these structures is 400 μm × 400 μm and the distance between the contacts is 10 μm. An increase in this distance ensures a sufficiently homogeneous distribution of the electric field in the active region of the photodiode. The capacitance of the interdigital system of contacts, based on the Schottky barrier, is considerably less than that of a pin photodetector of equal area and does not impose any restrictions on the characteristics of the pulsed photodiode response. The calculated response time of this photodiode structure (110 ps at half-amplitude) agrees with the experimental value.
Received: 01.01.1996
English version:
Quantum Electronics, 1996, Volume 26, Issue 3, Pages 278–280
DOI: https://doi.org/10.1070/QE1996v026n03ABEH000647
Bibliographic databases:
Document Type: Article
PACS: 42.79.Pw, 73.40.Sx, 85.60.Gz
Language: Russian


Citation: S. V. Averin, Yu. V. Gulyaev, M. D. Dmitriev, V. T. Potapov, R. Sachot, “Fast-response photodetectors with a large active area, based on Schottky-barrier semiconductor structures”, Kvantovaya Elektronika, 23:3 (1996), 284–286 [Quantum Electron., 26:3 (1996), 278–280]
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  • https://www.mathnet.ru/eng/qe647
  • https://www.mathnet.ru/eng/qe/v23/i3/p284
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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