Implantation of dopants in InSb with the aid of laser radiation

A study was made of the process occurring in the course of laser implantation of tellurium and selenium atoms in indium antimonide. The surface topography after irradiation, the implanted atom profiles, and electrophysical characteristics of the junctions formed in indium antimonide were investigated. Possible mechanisms of the diffusion of impurity atoms from diffusant films of different thicknesses subjected to illumination with laser radiation of different energy densities were analyzed.