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Kvantovaya Elektronika, 1981, Volume 8, Number 4, Pages 745–750 (Mi qe6445)  

This article is cited in 1 scientific paper (total in 1 paper)

Influence of dislocations on the characteristics of laser screens made of CdS

V. I. Kozlovsky, A. S. Nasibov, P. V. Reznikov
Abstract: The characteristics of a laser screen made of CdS and operating at 80 °K were investigated as a function of the density of growth dislocations in the range 5×10 – 2×107 cm–2 and of mechanically introduced dislocations with densities up to 6×107 cm–2. The influence of the dislocation density on the characteristics of a laser screen operated at high excitation rates was found to depend on the state of the broken bonds but not on the nature of dislocations.
Received: 06.07.1980
English version:
Soviet Journal of Quantum Electronics, 1981, Volume 11, Issue 4, Pages 450–453
DOI: https://doi.org/10.1070/QE1981v011n04ABEH006445
Bibliographic databases:
Document Type: Article
UDC: 621.378.35:621.315.592
PACS: 42.55.Px, 61.70.Le
Language: Russian


Citation: V. I. Kozlovsky, A. S. Nasibov, P. V. Reznikov, “Influence of dislocations on the characteristics of laser screens made of CdS”, Kvantovaya Elektronika, 8:4 (1981), 745–750 [Sov J Quantum Electron, 11:4 (1981), 450–453]
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  • https://www.mathnet.ru/eng/qe/v8/i4/p745
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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