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Kvantovaya Elektronika, 1987, Volume 14, Number 1, Pages 100–105 (Mi qe6423)  

Competition between modes generated due to adjacent transitions

D. S. Bakaev, Yu. A. Vdovin
Abstract: An analysis is made of competition between modes emitted due to adjacent transitions having a common upper level. Conditions are obtained for the onset of lasing due to one transition in the presence of lasing of arbitrary intensity due to the other transition in standing- and traveling-wave lasers. Both transitions were assumed to be homogeneously broadened. Allowance is made for level degeneracy, collisional broadening of the dipole-forbidden transition between the lower active levels, and collisions with the buffer gas that equalize the populations of the lower active levels. The ranges of single-mode and two-mode lasing are determined as a function of the radiation intensity, the spectroscopic parameters of the transitions, and their collisional broadening.
Received: 02.11.1985
English version:
Soviet Journal of Quantum Electronics, 1987, Volume 17, Issue 1, Pages 57–60
DOI: https://doi.org/10.1070/QE1987v017n01ABEH006423
Bibliographic databases:
Document Type: Article
UDC: 621.373.826
PACS: 42.55.Ah
Language: Russian


Citation: D. S. Bakaev, Yu. A. Vdovin, “Competition between modes generated due to adjacent transitions”, Kvantovaya Elektronika, 14:1 (1987), 100–105 [Sov J Quantum Electron, 17:1 (1987), 57–60]
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    Квантовая электроника Quantum Electronics
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