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Kvantovaya Elektronika, 1987, Volume 14, Number 1, Pages 94–99 (Mi qe6420)  

Electron-beam-pumped semiconductor laser with a waveguide output

I. G. Goncharov, A. A. Kirillovich
Abstract: The active region of a semiconductor laser pumped transversely by an electron beam was brought into direct contact with a multimode waveguide which had a 50-μ diameter core. The powers coupled into the waveguide from homogeneous, waveguide, and three-layer epitaxial GaAs–GaAlAs laser structures were 34, 430, and 35 mW, respectively, and the corresponding coupling-in efficiencies were 0.1, 0.3, and 0.06. Reduction in the width of the angular distribution and increase in the laser power in a system with an external mirror increased the spectral and total brightness of the laser radiation.
Received: 28.11.1985
English version:
Soviet Journal of Quantum Electronics, 1987, Volume 17, Issue 1, Pages 53–56
DOI: https://doi.org/10.1070/QE1987v017n01ABEH006420
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.Lh, 42.60.Jf, 42.79.Gn, 42.79.Bh
Language: Russian


Citation: I. G. Goncharov, A. A. Kirillovich, “Electron-beam-pumped semiconductor laser with a waveguide output”, Kvantovaya Elektronika, 14:1 (1987), 94–99 [Sov J Quantum Electron, 17:1 (1987), 53–56]
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  • https://www.mathnet.ru/eng/qe/v14/i1/p94
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    Квантовая электроника Quantum Electronics
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