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Kvantovaya Elektronika, 1985, Volume 12, Number 3, Pages 652–655 (Mi qe6384)  
Brief Communications

Fast-response bistable semiconductor device

A. M. Bakiev, Yu. V. Vandyshev, V. S. Dneprovskii, A. I. Furtichev
Full-text PDF (734 kB)
Abstract: A bistable semiconductor device constructed from a layer GaSe crystal had switching times not exceeding 2 ×10 –11sec. The short recovery (switching-off) time of the bistable device was clearly related to the stimulated process of recombination in the strongly excited semiconductor.
Received: 16.07.1984
English version:
Soviet Journal of Quantum Electronics, 1985, Volume 15, Issue 3, Pages 430–432
DOI: https://doi.org/10.1070/QE1985v015n03ABEH006384
Bibliographic databases:
Document Type: Article
UDC: 621.373.826
PACS: 42.65.Pc, 42.79.-e
Language: Russian


Citation: A. M. Bakiev, Yu. V. Vandyshev, V. S. Dneprovskii, A. I. Furtichev, “Fast-response bistable semiconductor device”, Kvantovaya Elektronika, 12:3 (1985), 652–655 [Sov J Quantum Electron, 15:3 (1985), 430–432]
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    		Квантовая электроника Quantum Electronics
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