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Kvantovaya Elektronika, 1981, Volume 8, Number 3, Pages 656–660 (Mi qe6376)  

This article is cited in 9 scientific papers (total in 9 papers)

Brief Communications

Luminescence and stimulated emission from BaGd2–xNdx(MoO4)4 single crystals

T. P. Balakireva, Ch. M. Briskina, E. V. Vasil'ev, V. V. Vakulyuk, V. F. Zolin, A. A. Maier, V. M. Markushev, V. A. Murashov, M. V. Provotorov
Full-text PDF (893 kB) Citations (9)
Abstract: The Stark structure of the 4F3/2, 4I11/2, and 4I9/2 levels of Nd3+ was determined for BaGd2–xNdx(MoO4)4 crystals. An investigation was made of concentration quenching of Nd3+ luminescence, which was found to be due to a cross relaxation mechanism. Ofelt parameters were estimated and molar absorption in the possible pumping range of Nd3+ was measured. The effective stimulated emission cross section was measured for the highest-intensity component of the 4F3/24I11/2 transition (λ = 1061 nm). For x = 0.15, stimulated emission was obtained from a flashlamp-pumped single crystal sample 1.2 mm thick.
Received: 07.08.1980
English version:
Soviet Journal of Quantum Electronics, 1981, Volume 11, Issue 3, Pages 398–400
DOI: https://doi.org/10.1070/QE1981v011n03ABEH006376
Bibliographic databases:
Document Type: Article
UDC: 535.37
PACS: 42.55.Rz, 78.55.Hx, 78.45.+h
Language: Russian


Citation: T. P. Balakireva, Ch. M. Briskina, E. V. Vasil'ev, V. V. Vakulyuk, V. F. Zolin, A. A. Maier, V. M. Markushev, V. A. Murashov, M. V. Provotorov, “Luminescence and stimulated emission from BaGd2–xNdx(MoO4)4 single crystals”, Kvantovaya Elektronika, 8:3 (1981), 656–660 [Sov J Quantum Electron, 11:3 (1981), 398–400]
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  • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Квантовая электроника Quantum Electronics
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