Some electrical and photoelectric properties of p–n structures based on InP, AlSb, and GaP

An investigation was made of metal–oxide–semiconductor structures based on n- and p-type InP and of metal–insulator–semiconductor structures based on n-type InP and n-type GaP. Some of their parameters were estimated, including the nonlinear coefficient, barrier height, charge density, oxide thickness, electric field intensity, etc. It was found that in Au–n–InP structures the efficiency of conversion of incident light increased by 5–6%, compared with the usual InP structures, when the oxide layer thickness had the optimal value of ~2.2–2.3 nm. The conversion efficiency obtained for the structures containing p-type InP and n-type AlSb was ~10–14%.