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Fabrication and investigation of GaInPAs/InP heterolasers
D. Akhmedov, I. Ismailov, N. Shokhudzhaev
Abstract:
Details of the method of fabricating GalnPAs/lnP heterolasers emitting at the ~1550 nm wavelength are given and results of an investigation of the threshold, spectral, and other characteristics of heterolasers in the 1000–1590 nm range are presented. A correlation is established between the threshold characteristics and the photon energy for GaInPAs/InP heterolasers. From the radiation spectrum and the results of x-ray microanalysis it is established that at the boundaries of the GaxIn1–xP1–y Asy/InP (x = 0.09, y = 0.2) heterojunctions there is a transition layer of variable composition which strongly influences the threshold current densities.
Received: 16.07.1982
Citation:
D. Akhmedov, I. Ismailov, N. Shokhudzhaev, “Fabrication and investigation of GaInPAs/InP heterolasers”, Kvantovaya Elektronika, 9:12 (1982), 2402–2406 [Sov J Quantum Electron, 12:12 (1982), 1568–1570]
Linking options:
https://www.mathnet.ru/eng/qe6284 https://www.mathnet.ru/eng/qe/v9/i12/p2402
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Abstract page: | 154 | Full-text PDF : | 82 | First page: | 1 |
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