Fabrication and investigation of GaInPAs/InP heterolasers

Details of the method of fabricating GalnPAs/lnP heterolasers emitting at the ~1550 nm wavelength are given and results of an investigation of the threshold, spectral, and other characteristics of heterolasers in the 1000–1590 nm range are presented. A correlation is established between the threshold characteristics and the photon energy for GaInPAs/InP heterolasers. From the radiation spectrum and the results of x-ray microanalysis it is established that at the boundaries of the Ga_xIn_1–xP_1–y As_y/InP (x = 0.09, y = 0.2) heterojunctions there is a transition layer of variable composition which strongly influences the threshold current densities.