Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 1996, Volume 23, Number 3, Pages 211–216 (Mi qe627)  

This article is cited in 1 scientific paper (total in 1 paper)

Lasers

Influence of impurities and of pump power on the operational characteristics of a high-pressure He — Cd laser

Yu. N. Novoselova, V. F. Tarasenkob, V. V. Uvarina, A. V. Fedenevb

a Institute of Electrophysics, Ural Branch, Russian Academy of Sciences, Ekaterinburg
b Institute of High Current Electronics, Siberian Branch of the Russian Academy of Sciences, Tomsk
Full-text PDF (208 kB) Citations (1)
Abstract: An experimental investigation was made of a high-pressure He — Cd laser excited by electron-beam pulses of nanosecond and microsecond durations. The lasing characteristics were determined as a function of the pump power and of the composition of the gaseous mixture. The attention was concentrated on stimulated emission at λ = 325 nm. The lowest threshold for lasing at this wavelength did not exceed 10 W cm–3 and the specific output power was 50, 35, and 10 mW cm–3 when the duration of the output radiation pulses was 40 ns, 2 μs, and 7 μs, respectively.
Received: 01.01.1996
English version:
Quantum Electronics, 1996, Volume 26, Issue 3, Pages 205–210
DOI: https://doi.org/10.1070/QE1996v026n03ABEH000627
Bibliographic databases:
Document Type: Article
PACS: 42.55.Lt, 42.60.Lh
Language: Russian


Citation: Yu. N. Novoselov, V. F. Tarasenko, V. V. Uvarin, A. V. Fedenev, “Influence of impurities and of pump power on the operational characteristics of a high-pressure He — Cd laser”, Kvantovaya Elektronika, 23:3 (1996), 211–216 [Quantum Electron., 26:3 (1996), 205–210]
Linking options:
  • https://www.mathnet.ru/eng/qe627
  • https://www.mathnet.ru/eng/qe/v23/i3/p211
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
    Statistics & downloads:
    Abstract page:152
    Full-text PDF :70
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024