Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 1982, Volume 9, Number 11, Pages 2346–2347 (Mi qe6189)  

This article is cited in 1 scientific paper (total in 1 paper)

Brief Communications

Power characteristics of an He–Ne laser utilizing the 3s2–2p6 transition in neon (λ =612 nm) and containing a 127J2 absorption cell

M. V. Danileĭko, A. M. Tselinko, L. P. Yatsenko
Full-text PDF (407 kB) Citations (1)
Abstract: An experimental investigation was made of the power characteristics of an He–Ne/J2 laser utilizing the 3s2–2p6 transition in neon (λ = 612 nm). The parameters of the active medium corresponding to the maximum output power were determined and high-contrast resonances of saturated absorption were recorded.
Received: 03.03.1982
English version:
Soviet Journal of Quantum Electronics, 1982, Volume 12, Issue 11, Pages 1529–1530
DOI: https://doi.org/10.1070/QE1982v012n11ABEH006189
Bibliographic databases:
Document Type: Article
UDC: 621.375.82
PACS: 42.55.Fn
Language: Russian


Citation: M. V. Danileĭko, A. M. Tselinko, L. P. Yatsenko, “Power characteristics of an He–Ne laser utilizing the 3s2–2p6 transition in neon (λ =612 nm) and containing a 127J2 absorption cell”, Kvantovaya Elektronika, 9:11 (1982), 2346–2347 [Sov J Quantum Electron, 12:11 (1982), 1529–1530]
Linking options:
  • https://www.mathnet.ru/eng/qe6189
  • https://www.mathnet.ru/eng/qe/v9/i11/p2346
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
    Statistics & downloads:
    Abstract page:137
    Full-text PDF :68
    First page:1
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024