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Kvantovaya Elektronika, 1982, Volume 9, Number 11, Pages 2167–2172 (Mi qe6087)  

This article is cited in 2 scientific papers (total in 2 papers)

Optimal regime for forming topological patterns when processing films with laser radiation

V. P. Veiko, I. M. Karpman, M. N. Libenson, E. B. Yakovlev
Abstract: The results are given of an experimental investigation of the physical and technological laws governing the formation of individual precision components in thin films, and of the synthesis of these pattern components using the contour-projection method. A study was made of the influence on the quality of the synthesized pattern of the degree of overlapping of the neighboring components. The results of the experiments were used to establish the fundamental limitations of this method. A method is proposed for selecting the optimal processing regime.
Received: 30.11.1981
English version:
Soviet Journal of Quantum Electronics, 1982, Volume 12, Issue 11, Pages 1408–1411
DOI: https://doi.org/10.1070/QE1982v012n11ABEH006087
Bibliographic databases:
Document Type: Article
UDC: 621.373.826
PACS: 68.55.+b, 79.20.Ds, 78.90.+t, 81.40.-z
Language: Russian


Citation: V. P. Veiko, I. M. Karpman, M. N. Libenson, E. B. Yakovlev, “Optimal regime for forming topological patterns when processing films with laser radiation”, Kvantovaya Elektronika, 9:11 (1982), 2167–2172 [Sov J Quantum Electron, 12:11 (1982), 1408–1411]
Linking options:
  • https://www.mathnet.ru/eng/qe6087
  • https://www.mathnet.ru/eng/qe/v9/i11/p2167
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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