Superluminescent diodes based on single-quantum-well (GaAl)As heterostructures

Theoretical and experimental investigations were made of the power, spectral, and polarisation characteristics of superluminescent diodes based on (GaAl)As heterostructures with separate confinement and a quantum-well active layer. The technical characteristics of these diodes were not inferior to those of superluminescent diodes based on traditional double-sided heterostructures. The new diodes were superior to the traditional heterostructures in respect of the half-width of the emission spectrum which was up to 100 nm, corresponding to a coherence length less than 7 μm. Test samples of light-emitting modules based on the investigated diodes were constructed.