L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “Continuous-wave injection lasers emitting in the 1.5–1.6 μ range”, Kvantovaya Elektronika, 9:9 (1982), 1749 [Sov J Quantum Electron, 12:9 (1982), 1127]

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Kvantovaya Elektronika, 1982, Volume 9, Number 9, Page 1749 (Mi qe5964)

Letters to the editor

Continuous-wave injection lasers emitting in the 1.5–1.6 μ range

L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko

Full-text PDF (240 kB)

Abstract: Continuous lasing at room temperature was achieved in injection lasers with buried mesa-stripe GaInPAs/InP heterostructures emitting in the wavelength range 1.5–1.6 μ. The substrates were made of p-type InP, whereas the emitter layers and the material above the buried heterostructure was a quaternary solid solution of intermediate composition. The minimum threshold current was 23 mA.

Received: 06.08.1982

English version:
Soviet Journal of Quantum Electronics, 1982, Volume 12, Issue 9, Pages 1127
DOI: https://doi.org/10.1070/QE1982v012n09ABEH005964

Bibliographic databases:

Document Type: Article

UDC: 621.373.826.038.825.4

PACS: 42.60.By, 42.55.Px

Language: Russian

Citation: L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “Continuous-wave injection lasers emitting in the 1.5–1.6 μ range”, Kvantovaya Elektronika, 9:9 (1982), 1749 [Sov J Quantum Electron, 12:9 (1982), 1127]

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https://www.mathnet.ru/eng/qe5964

https://www.mathnet.ru/eng/qe/v9/i9/p1749

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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