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Kvantovaya Elektronika, 1981, Volume 8, Number 2, Pages 430–433 (Mi qe5912)  

Brief Communications

Lead-tin telluride injection lasers prepared by diffusion of Sb

A. L. Kurbatov, M. V. Shubin, P. M. Starik, V. M. Malovetskaya, A. D. Britov, N. D. Polchkova
Abstract: The method of donor diffusion was used to prepare Pb1–xSnxTe (x =0.18–0.24) laser diodes operating continuously at 10 K. The emission spectra of these lasers and the dependences of the spectra on the ambient temperature and injection current were investigated. The lasers were used in several high-resolution spectroscopy experiments.
Received: 22.06.1980
Revised: 05.09.1980
English version:
Soviet Journal of Quantum Electronics, 1981, Volume 11, Issue 2, Pages 264–266
DOI: https://doi.org/10.1070/QE1981v011n02ABEH005912
Bibliographic databases:
Document Type: Article
UDC: 621.375.826
PACS: 42.55.Px
Language: Russian


Citation: A. L. Kurbatov, M. V. Shubin, P. M. Starik, V. M. Malovetskaya, A. D. Britov, N. D. Polchkova, “Lead-tin telluride injection lasers prepared by diffusion of Sb”, Kvantovaya Elektronika, 8:2 (1981), 430–433 [Sov J Quantum Electron, 11:2 (1981), 264–266]
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