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Kvantovaya Elektronika, 1981, Volume 8, Number 2, Pages 373–375 (Mi qe5884)  

This article is cited in 4 scientific papers (total in 4 papers)

Brief Communications

Lasing as a result of a B–X transition in the excimer XeF formed as a result of photodissociation of KrF2 in mixtures with Xe

V. S. Zuev, I. F. Isaev, A. V. Kanaev, L. D. Mikheev, D. B. Stavrovskiĭ, N. G. Shchepetov
Full-text PDF (544 kB) Citations (4)
Abstract: An investigation was made of the absorption spectrum of KrF2 in the range 115–190 nm. A structure-free absorption band with a maximum at 162 nmand a half-width of 16 nm was observed. The absorption of light in this band resulted in photodissociation of KrF2 producing excited KrF. Vacuum ultraviolet radiation generated by a high-current discharge was used to excite a KrF2–Xe–N2–Ar gas mixture. This resulted in lasing due to the B(v' = 0)–X(v'' = 3) transition in the XeF excimer (λ = 353 nm).
Received: 13.08.1980
English version:
Soviet Journal of Quantum Electronics, 1981, Volume 11, Issue 2, Pages 221–222
DOI: https://doi.org/10.1070/QE1981v011n02ABEH005884
Bibliographic databases:
Document Type: Article
UDC: 621.375.826+535.341.08+535.37
PACS: 42.55.Ks
Language: Russian


Citation: V. S. Zuev, I. F. Isaev, A. V. Kanaev, L. D. Mikheev, D. B. Stavrovskiĭ, N. G. Shchepetov, “Lasing as a result of a B–X transition in the excimer XeF formed as a result of photodissociation of KrF2 in mixtures with Xe”, Kvantovaya Elektronika, 8:2 (1981), 373–375 [Sov J Quantum Electron, 11:2 (1981), 221–222]
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  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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