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Kvantovaya Elektronika, 1982, Volume 9, Number 8, Pages 1614–1619 (Mi qe5777)  

This article is cited in 1 scientific paper (total in 1 paper)

Multistage sensitization of 4F9/24I11/2 and 4F9/24I13/2 lasing transitions in Er3+ ions in a BaYb2F8 crystal

B. M. Antipenko, A. A. Mak, O. B. Raba, B. V. Sinitsyn, T. V. Uvarova
Abstract: A new method was developed for determining the mechanism of anti-Stokes filling of luminescent levels of an activator in a rare-earth crystal. An investigation was made of the dependences of the absolute populations of the 4I13/2, 4I11/2, 4F9/2, 4S3/2, H9/2, 4G11/2, and 2P3/2 levels of Er3+ in a BaYb2F8 crystal on the energy absorbed within the Yb3+ sensitizer band. The mechanisms of anti-Stokes filling of the 4I13/2, 4F9/2, 4S3/2, and 2H9/2 levels of Er3+ were determined under conditions of weak (1 mJ/cm3) and strong (~10 J/cm3) pumping.
Received: 23.08.1981
English version:
Soviet Journal of Quantum Electronics, 1982, Volume 12, Issue 8, Pages 1034–1037
DOI: https://doi.org/10.1070/QE1982v012n08ABEH005777
Bibliographic databases:
Document Type: Article
UDC: 621.373:535
PACS: 78.55.Hx, 78.30.Gt, 78.45.+h
Language: Russian


Citation: B. M. Antipenko, A. A. Mak, O. B. Raba, B. V. Sinitsyn, T. V. Uvarova, “Multistage sensitization of 4F9/24I11/2 and 4F9/24I13/2 lasing transitions in Er3+ ions in a BaYb2F8 crystal”, Kvantovaya Elektronika, 9:8 (1982), 1614–1619 [Sov J Quantum Electron, 12:8 (1982), 1034–1037]
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  • https://www.mathnet.ru/eng/qe/v9/i8/p1614
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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