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Kvantovaya Elektronika, 1986, Volume 13, Number 2, Pages 286–292 (Mi qe5737)  

Picosecond optoelectronic semiconductor switches

M. T. Portella, C. H. Âãitî-Ñruz, M. A. Scarparo
Abstract: A description is given of the construction and performance of ultrafast semiconductor electric switches controlled by optical pulses. A careful design of the transmission line connected to a switch made it possible to generate electrical pulses of picosecond duration and amplitudes of the order of several volts. It was found that at high voltages the switching efficiency was limited by intervalley scattering in semiconductors in a strong electric field, giving rise to a negative differential resistance.
Received: 20.04.1985
English version:
Soviet Journal of Quantum Electronics, 1986, Volume 16, Issue 2, Pages 191–195
DOI: https://doi.org/10.1070/QE1986v016n02ABEH005737
Bibliographic databases:
Document Type: Article
UDC: 621.374.3.062.8:621.373.826
PACS: 85.60.-q, 42.79.Ta
Language: Russian


Citation: M. T. Portella, C. H. Âãitî-Ñruz, M. A. Scarparo, “Picosecond optoelectronic semiconductor switches”, Kvantovaya Elektronika, 13:2 (1986), 286–292 [Sov J Quantum Electron, 16:2 (1986), 191–195]
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