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Kvantovaya Elektronika, 1974, Volume 1, Number 1, Pages 141–143 (Mi qe5716)  
Brief Communications

Electron-beam-pumped heterostructure lasers

Yu. A. Bykovskii, I. G. Goncharov, I. T. Rassokhin, A. F. Uzkii
Full-text PDF (544 kB)
Abstract: The threshold current of GaAs samples with waveguide structures and optimal doping was reduced compared with the threshold current of homogeneously doped lasers. The threshold was reduced to 0.15–0.2 A/cm2 for electrons of 30–50 keV energy and the external differential quantum efficiency was increased.
Received: 14.02.1972
Revised: 30.07.1972
English version:
Soviet Journal of Quantum Electronics, 1974, Volume 4, Issue 1, Pages 78–79
DOI: https://doi.org/10.1070/QE1974v004n01ABEH005716
Document Type: Article
UDC: 621.378.35
PACS: 42.55.Px, 42.60.By, 42.60.Lh, 42.60.Da, 42.79.Bh
Language: Russian


Citation: Yu. A. Bykovskii, I. G. Goncharov, I. T. Rassokhin, A. F. Uzkii, “Electron-beam-pumped heterostructure lasers”, Kvantovaya Elektronika, 1:1 (1974), 141–143 [Sov J Quantum Electron, 4:1 (1974), 78–79]
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