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Brief Communications
Electron-beam-pumped heterostructure lasers
Yu. A. Bykovskii, I. G. Goncharov, I. T. Rassokhin, A. F. Uzkii
Abstract:
The threshold current of GaAs samples with waveguide structures and optimal doping was reduced compared with the threshold current of homogeneously doped lasers. The threshold was reduced to 0.15–0.2 A/cm2 for electrons of 30–50 keV energy and the external differential quantum efficiency was increased.
Received: 14.02.1972
Revised: 30.07.1972
Citation:
Yu. A. Bykovskii, I. G. Goncharov, I. T. Rassokhin, A. F. Uzkii, “Electron-beam-pumped heterostructure lasers”, Kvantovaya Elektronika, 1:1 (1974), 141–143 [Sov J Quantum Electron, 4:1 (1974), 78–79]
Linking options:
https://www.mathnet.ru/eng/qe5716 https://www.mathnet.ru/eng/qe/v1/i1/p141
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| Statistics & downloads: |
| Abstract page: | 90 | | Full-text PDF : | 51 |
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