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Kvantovaya Elektronika, 1982, Volume 9, Number 7, Pages 1486–1488 (Mi qe5711)  

Brief Communications

Cathodoluminescence of epitaxial Pb1–xSnxTe films with a composition gradient in the growth plane

A. N. Vlasov, V. I. Stafeev, A. I. Uvarov, E. M. Kistova, A. N. Likholetov, M. A. Konstantinova
Abstract: Resublimation in a hydrogen stream produced epitaxial Pb1–xSnxTe films of constant composition as well as with a composition gradient in the growth plane. The integrated intensity of the cathodoluminescence was comparable with the intensity of the luminescence emitted by lead tin tellunde of compositions in the range x = 0–0.5 mole SnTe. The optimal growth temperature was 780–790°C when the temperature drop between the source and the substrate was about 10°C. The wavelength of the cathodoluminescence emitted at 90°K varied from 5 to 15 μ along the composition gradient.
Received: 10.06.1981
Revised: 15.09.1981
English version:
Soviet Journal of Quantum Electronics, 1982, Volume 12, Issue 7, Pages 949–951
DOI: https://doi.org/10.1070/QE1982v012n07ABEH005711
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 78.60.Hk, 68.55.+b
Language: Russian


Citation: A. N. Vlasov, V. I. Stafeev, A. I. Uvarov, E. M. Kistova, A. N. Likholetov, M. A. Konstantinova, “Cathodoluminescence of epitaxial Pb1–xSnxTe films with a composition gradient in the growth plane”, Kvantovaya Elektronika, 9:7 (1982), 1486–1488 [Sov J Quantum Electron, 12:7 (1982), 949–951]
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    Квантовая электроника Quantum Electronics
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